Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source

In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. phenomenon, heavy ion produces series electron-hole pairs along incident track, and then generated transient current can overturn logical state device when number large enough. single-particle DMG-GDS-HJLTFET, carried energy usually represented by linear transfer value (LET). simulation, effects energy, angle, completion time, position drain bias voltage on DMG-GDS-HJLTFET are investigated. On basis, we optimize auxiliary gate dielectric, tunneling length for reliability. Simulation results show HfO2 with dielectric constant should be selected as in anti-irradiation design. Larger leads to larger peak smaller means pulse width; from point anti-irradiation, at about 10 nm.